Innovation and Partnerships Office

Source for High Brightness Multiple Beamlets IB-2197

APPLICATIONS OF TECHNOLOGY:

  • Maskless lithography
  • X-ray production

ADVANTAGES:

  • Minimizes lithographic exposure times
  • Facilitates remote scanning

ABSTRACT:

This technology provides techniques for patterned beamlet extraction. The beamlets can be either positive ions or electrons, and they may be produced with a diameter of one micrometer with interaperture spacings of 12 micrometers. 

In maskless lithography, step-wise movement of the beamlets relative to the target substrate enables devices to be directly e-beam written. Ion beams may be directly written as well. The beamlets also may be electrons striking a high Z material for X-ray production, thereafter collimated to provide patterned X-ray exposures such as those used in CAT scans.

STATUS: Issued Patent #7609815 available at www.uspto.gov. Available for licensing or collaborative research.

SEE THESE OTHER BERKELEY LAB TECHNOLOGIES IN THIS FIELD:

Universal Pattern Generator for Micro-Ion Beam Reduction Lithography, IB-1387

Extraction System for Ion Sources, IB-1617

REFERENCE NUMBER: IB-2197