Innovation and Partnerships Office

Nanometer-Scale Ablation Using Focused, Coherent Extreme Ultraviolet / Soft X-ray Light JIB-3179

APPLICATIONS OF TECHNOLOGY:

Fabricates

  • Stencils serving as masks for photolithography
  • Nanoscale micro-electronics mechanical systems (MEMS)
  • Patterned surfaces for applications in materials science and biology

ADVANTAGES:

  • Generates holes having diameters less than 200 nm and clean walls
  • Permits analysis of nanometer-sized portions of surfaces

ABSTRACT:

Scientists at Berkeley Lab and Colorado State University have demonstrated the use of focused coherent Extreme Ultraviolet / Soft X-ray (EUV/SXR) light for the direct patterning of nanoscale features, specifically ablation of holes having diameters as small as 82 nm, and having clean walls, using a 46.9 nm laser.

For a complete description of this technology, see Issued US Patent 7,931,850, available at http://patft.uspto.gov/.

STATUS: Issued US Patent 7,931,850. Available for licensing.

SEE THESE OTHER BERKELEY LAB TECHNOLOGIES IN THIS FIELD:

Nanoscale Pattern Transfer for Lithography, Optics, Films and NEMS, IB-2162

Extreme Ultraviolet Lithography Tools, IB-2468, 2469, 2476, 2477, 2478, 2479

Graphene Membranes for Nanometer-scale Lithography and Single Atom Resolution TEM Imaging, IB-2501, 2502

REFERENCE NUMBER: JIB-3179