Deposition and Lithography Methods

Nanopatterned Coatings for Semiconductor/Bio Interfaces (2023-079, 2023-122)

Researchers at Berkeley Lab have developed poly(methyl methacrylate) (PMMA) brushes as passivators to prevent adsorption of biomolecules onto a substrate. The researchers have also developed peptoids (synthetic peptide mimics) that can be programmed to passivate against or bind to biomolecules. Various end functional groups can be incorporated into peptoids to create ultrathin (~1 nm layer) monolayers tethered to corresponding substrates to modify surface properties.

Inventors: Beihang Yu, Ricardo Ruiz, Paul Ashby, Michael Connolly, Grigory Tikhomirov, Ronald Zuckermann

Improved Mask Absorber for Extreme Ultraviolet Lithography (2019-058)

This invention is a method for producing EUV masks with improved absorber layers, crucial for fabricating semiconductor devices with node patterning of 7 nm and smaller. By utilizing a newly discovered self-passivation mechanism of chromium, the alloy used in the masks can be controllably patterned by plasma processing. This innovation offers benefits such as ease of etching, high material selectivity, and the ability to create high-resolution masks with previously inaccessible dimensions, thus advancing EUV lithography for future semiconductor fabrication.

Inventors: Daniel Staaks

Neural Atomic Source Atomic Layer Deposition (NASALD) (2017-186)

Berkeley Lab’s Neutral Atomic Source Atomic Layer Deposition (NASALD) replaces one or more chemical precursors with highly reactive neutral atoms to enable low-temperature growth of ultrathin films with greater chemical variety. This simplified, highly controlled process improves film purity and quality while reducing defects and manufacturing costs in semiconductor and microelectronic fabrication.

Inventors: Shaul Aloni, Adam Schwartzberg

Graphene Membranes for Nanometer-scale Lithography and Single Atom Resolution TEM Imaging, 2502 IB-2501

This invention is a method to produce freestanding graphene membranes for creating etch masks and doping patterns in microelectronic devices. These graphene membranes offer superior resolution compared to conventional lithography methods and can visualize defects and dynamics in a transmission electron microscope (TEM), making them valuable for next-generation electronic devices and TEM imaging of various materials.

Inventors: Jannik Christian Meyer, Alex K Zettl

Nanoscale Pattern Transfer for Lithography, Optics, Films and NEMS (IB-2162)

This invention is a novel dry etching process which alternates deposition and etching to produce and transfer nanoscale patterns in various materials, including silicon and metals. Unlike previous methods, this technique offers versatility at the nanoscale, enabling shallow or deep etching of thin films, metal molds, or silicon-based polymer films, and even deep etching of metals for applications like X-ray or extreme ultraviolet optical devices.

Inventors: Weilun Chao, Deirdre L Olynick, Ivo Rangelow

Advanced Manufacturing Methods

Low Temperature Synthesis of High Entropy Materials for Improved Semiconductors (2024-010)

A room-temperature and low-temperature synthesis method for high-entropy metal halide perovskite semiconductor single crystals, eliminating the need for extreme (>1000 °C) processing. This fast, energy-efficient, and scalable approach enables tunable optoelectronic properties—such as controllable light emission—making high-entropy semiconductors far more practical for next-generation chips and optoelectronic devices.

Inventors: Peidong Yang, Maria C. Folgueras, Yuxin Jiang

Reflective Phase Microscopy for Visualisation of 2D Heterostructures in Nanotechnology and Semiconductor Fabrication (2022-129)

A reflective phase-contrast microscope that uses optical interference to provide high-contrast visualization of transparent 2D materials and buried layers directly on semiconductor wafers. The technique enables non-destructive imaging of otherwise “invisible” monolayers and complex heterostructures, improving alignment, fabrication, and study of advanced electronic and quantum materials.

Inventors: Feng Wang, Haleem Kim

Sequence-Defined Polypeptoids for Area-Selective Deposition for Reducing Edge Placement Error in Semiconductor Fabrication (2023-047)

This is a new method of area-selective deposition based on polypeptoids, a type of bioinspired, sequence-defined polymers. These polymers offer precise control over their chemical composition and properties. This invention is expected to be useful for semiconductor manufacturing companies, especially as a self-aligned fabrication process with reduced edge placement errors in the alignment of features in multilayer device stacks.

Inventors: Beihang Yu, Ricardo Ruiz

Direct Thermal Growth of High Quality III-IV Materials Below 300 degrees C (2019-035)

This technology introduces a low-temperature templated liquid phase growth method that enables direct integration of high-performance III-V semiconductor materials onto existing silicon circuits and other substrates without exceeding thermal limits. The key benefits are higher device density through 3D integration, compatibility with a wide range of materials (including amorphous and flexible substrates), and a scalable path beyond Moore’s Law for future microelectronics.

Inventors: Mark Hettick, Ali Javey

Direct Growth of Single Crystalline III-V Semiconductors on Amorphous Substrates (2016-037)

This invention is the Templated Liquid Phase (TLP) crystal growth technology, allowing the direct growth of high-performance single crystalline III-V semiconductors on various substrates. Unlike other methods requiring closely matched epitaxial substrates, this approach offers user-defined geometries and dimensions on arbitrary substrates, reducing processing complexity and costs while enabling photovoltaic and optoelectronic applications.

Inventors: Kevin Chen, Ali Javey, Rehan R Kapadia

Enhancing Photoluminescence Quantum Yield for High Performance Optoelectronics (2015-159)

This invention utilizes an organic super acid molecule to passivate and repair surface defects in semiconductor systems, crucial for enhancing the efficiency of optoelectronic devices like LEDs, lasers, and solar cells.

Inventors: Matin Amani, James Bullock, Ali Javey, Daisuke Kiriya, Der-Hsien Lien

Stable and Highly Conductive Transparent Semiconductors (IB-2957)

A dry-processing method to halogen-dope transition metal oxides, creating transparent, chemically stable n-type semiconductors with high electron mobility. The approach delivers up to a 40× conductivity increase without introducing unstable oxygen vacancies, enabling longer-lived, high-performance devices such as transparent TFTs, photovoltaics, and sensors.

Inventors: Gabor Somorjai, L Baker, Hyungtak Seo, Antoine Hervier

High Performance, Made-to-Order Organic Semiconductors for Energy Conversion Applications (2013-138, 2014-080)

This invention introduces a discotic electron donor and electron acceptor derived from naturally occurring indigo, offering a versatile platform for constructing organic semiconductors. The electron donor, Thienoazacoronene (TAC), displays high self-organization and excellent performance in electronic devices, including field-effect transistors and organic photovoltaic devices. Meanwhile, the electron acceptor, BAI, synthesized from indigo dye, demonstrates tunable optoelectronic properties and promising carrier transport characteristics, making it suitable for various applications in flexible electronics.

Inventors: Bo He, Yi Liu, Andrew Pun

Microelectronic Devices

Customizable and Scalable Ultra-thin Composite Membranes via Atomic Layer Deposition (2021-068)

This is a new fabrication method for making ultra-thin suspended membranes of a variety of materials. These free-standing membranes can be as thin as several nanometers, and are fabricated in a way that allows for the release of ultra-thin ceramic films without damage. Beyond use as electron-transparent windows, these membranes can be used in microelectronics as sensors or diaphragms.

Inventors: Stefano Cabrini, Shaul Aloni, Adam Schwartzberg, Rohan Dhall, Michael Elowson

Antiferromagnetic Memory Storage Device from Magnetic Transition Metal Dichalcogenides (2019-114)

This invention is a novel technology utilizing transition metal dichalcogenides (TMDs) intercalated with magnetic transition metals to create antiferromagnetic memory devices. These devices offer faster, lower-power, and non-volatile memory storage solutions, with the potential for ultrafast spin dynamics and operation at terahertz speeds. Additionally, the absence of external stray fields makes them ideal for tightly packed configurations and promising for future spintronic applications.

Inventors: James Analytis, Spencer Doyle, Caolan John, Eran Maniv, Nityan Nair

First Diode for Thermal Management of Micro and Macro Devices (IB-2336)

This invention introduces the first solid-state thermal rectifier, utilizing boron nitride nanotubes loaded with high-density materials like trimethyl cyclopentadienyl platinum (C9H16Pt). Achieving significant thermal rectification of up to 7 percent at room temperature, the device has potential applications in improving thermal management across various fields, from microelectronics to refrigeration and computing systems utilizing phonons for information processing.

Inventors: Chih-Wei Chang, Arunava Majumdar, Alex K Zettl

Nanocrystal Heterostructures with Controlled Branching Points (IB-1948)

This invention is a method for fabricating complex inorganic nanostructures, such as quantum rods and dots, by epitaxially connecting them at branched and linear junctions within single colloidal nanocrystals. By combining different inorganic materials with various functional properties in a single nanocrystal, this approach opens up possibilities for applications in quantum information processing, artificial photosynthesis, and advancements in solar cells, LEDs, and transistors.

Inventors: Armand Alivisatos, Steven M. Hughes, Liberato Manna, Delia J Milliron

Reliable, High Performance Transistors on Flexible Substrates (IB-3252)

This invention is a method to produce uniform and high-performance transistors on mechanically flexible and stretchable substrates using semiconductor-enriched single-wall carbon nanotube (SWNT) networks processed through solution methods. By leveraging the flexibility and bendability of SWNTs, this technology offers a promising avenue for the fabrication of low-cost flexible and stretchable electronics without the need for traditional lithography methods.

Inventors: Ali Javey, Toshitake Takahashi, Kuniharu Takei

Updated Feb. 3, 2026