APPLICATIONS OF TECHNOLOGY: Ultra-high vacuum Coatings on accelerator components ADVANTAGES: Enables deposition on the inside of tubes 6 mm in diameter, and smaller Enables deposition on the inside of hollow, curved components In-situ coating and activation ABSTRACT: While high-aspect ratio and/or curved tubing is important for improving accelerator … [Read more...] about Endoscopic Laser Ablation for Curved / Twisted Tubing 2015-124
Semiconductor and Other Manufacturing
Miniature Ion Accelerator 2016-059
APPLICATIONS OF TECHNOLOGY: Mass spectrometers Semiconductor and other manufacturing, e.g., ion implantation and exfoliation of materials, surface modifications Homeland security screening Pharmaceutical, medical, and environmental science research Plasma heating ADVANTAGES: Scalability to very high beam power Suits ultra-compact to large-scale … [Read more...] about Miniature Ion Accelerator 2016-059
Direct Growth of Single Crystalline III-V Semiconductors on Amorphous Substrates 2016-037
APPLICATIONS OF TECHNOLOGY: High performance solar cells Electronic and optoelectronic devices, e.g., transistors, photodetectors, lasers ADVANTAGES: Less costly and complex than current methods Growth on amorphous substrates Applicable to a range of III-V materials ABSTRACT: A Berkeley Lab team of researchers led by Ali Javey has developed a … [Read more...] about Direct Growth of Single Crystalline III-V Semiconductors on Amorphous Substrates 2016-037
Enhancing Photoluminescence Quantum Yield for High Performance Optoelectrics 2015-159
APPLICATIONS OF TECHNOLOGY: LEDs Lasers Solar Cells Semiconductor emitters and detectors ADVANTAGES: Quantum yield enhancement to near-unit values Surface recombination velocity reduction Improved Voc in solar cells PL peak intensity increase ABSTRACT: Berkeley Lab researchers led by Ali Javey used chemical treatments utilizing an organic … [Read more...] about Enhancing Photoluminescence Quantum Yield for High Performance Optoelectrics 2015-159
Co-implantation of Group VI Elements and Nitrogen for the Formation of Non-Alloyed Ohmic Contacts for n-type GaAs IB-1609
APPLICATIONS OF TECHNOLOGY: Fabrication of low resistivity non-alloyed ohmic contacts on n-type gallium arsenide devices. ADVANTAGES: Low resistivity Minimize heat generation Reduce power consumption Simple fabrication process Reproducible process ABSTRACT: Wladyslaw Walukiewicz and Kin Man Yu at Berkeley Lab have developed a technique that would … [Read more...] about Co-implantation of Group VI Elements and Nitrogen for the Formation of Non-Alloyed Ohmic Contacts for n-type GaAs IB-1609