APPLICATIONS OF TECHNOLOGY:
- Stencils serving as masks for photolithography
- Nanoscale micro-electronics mechanical systems (MEMS)
- Patterned surfaces for applications in materials science and biology
- Generates holes having diameters less than 200 nm and clean walls
- Permits analysis of nanometer-sized portions of surfaces
Scientists at Berkeley Lab and Colorado State University have demonstrated the use of focused coherent Extreme Ultraviolet / Soft X-ray (EUV/SXR) light for the direct patterning of nanoscale features, specifically ablation of holes having diameters as small as 82 nm, and having clean walls, using a 46.9 nm laser.
For a complete description of this technology, see Issued US Patent 7,931,850, available at http://patft.uspto.gov/.
STATUS: Issued US Patent 7,931,850. Available for licensing.
SEE THESE OTHER BERKELEY LAB TECHNOLOGIES IN THIS FIELD:
Nanoscale Pattern Transfer for Lithography, Optics, Films and NEMS, IB-2162
Extreme Ultraviolet Lithography Tools, IB-2468, 2469, 2476, 2477, 2478, 2479
Graphene Membranes for Nanometer-scale Lithography and Single Atom Resolution TEM Imaging, IB-2501, 2502
REFERENCE NUMBER: JIB-3179