APPLICATIONS OF TECHNOLOGY: Semiconductor device manufacturing Sensors ADVANTAGES: Scalable manufacturing process Single pass simplicity Suitable for precision patterning ABSTRACT: Yuegang Zhang and a team of Berkeley Lab scientists have developed a single-step chemical vapor deposition (CVD) process that can bond a single layer of graphene onto a … [Read more...] about Single Pass Graphene Deposition on Dielectric Surfaces JIB-2758
Semiconductor and Other Manufacturing
Graphene Membranes for Nanometer-scale Lithography and Single Atom Resolution TEM Imaging , 2502 IB-2501
APPLICATIONS OF TECHNOLOGY: Using electron-beam induced deposition (EBID) on graphene membranes to create nano-scale doping patterns for electronic circuits lithography etch masks diffraction gratings (for monochromators, spectrometers, wavelength division multiplexing devices, optical pulse compressing devices and other optical devices) Investigating the … [Read more...] about Graphene Membranes for Nanometer-scale Lithography and Single Atom Resolution TEM Imaging , 2502 IB-2501
Extreme Ultraviolet Lithography Tools IB-2468, IB-2469, IB-2476, IB-2477, IB-2478, IB-2479
APPLICATIONS OF TECHNOLOGY: Extreme ultraviolet (EUV) lithography Semiconductor manufacturing Nanopatterning Directed self assembly ADVANTAGES: Low cost High resolution Capable of working with incoherent light sources Does not require excessive spatial or temporal filtering Large depth of focus (depending on source properties) High speed … [Read more...] about Extreme Ultraviolet Lithography Tools IB-2468, IB-2469, IB-2476, IB-2477, IB-2478, IB-2479
Source for High Brightness Multiple Beamlets IB-2197
APPLICATIONS OF TECHNOLOGY: Maskless lithography X-ray production ADVANTAGES: Minimizes lithographic exposure times Facilitates remote scanning ABSTRACT: This technology provides techniques for patterned beamlet extraction. The beamlets can be either positive ions or electrons, and they may be produced with a diameter of one micrometer with … [Read more...] about Source for High Brightness Multiple Beamlets IB-2197
Ion Beam Extractor with Counterbore IB-1780
SUMMARY OF THE INVENTION The invention is an extractor system for a plasma ion source comprising a single (first) electrode or a pair of spaced electrodes, a first or plasma forming electrode and a second or extraction electrode, with one or more aligned apertures, to which suitable voltage(s) are applied, wherein the aperture(s) in the first electrode (and/or second … [Read more...] about Ion Beam Extractor with Counterbore IB-1780