Types of Technologies
Deposition and Lithography Methods
Improved Mask Absorber for Extreme Ultraviolet Lithography (2019-058)
This invention is a method for producing EUV masks with improved absorber layers, crucial for fabricating semiconductor devices with node patterning of 7 nm and smaller. By utilizing a newly discovered self-passivation mechanism of chromium, the alloy used in the masks can be controllably patterned by plasma processing. This innovation offers benefits such as ease of etching, high material selectivity, and the ability to create high-resolution masks with previously inaccessible dimensions, thus advancing EUV lithography for future semiconductor fabrication.
Inventors: Daniel Staaks
Contact: Lucian Sweitzer
Cost-Effective, Laser-Assisted In Situ Nanostructure Fabrication and Processing (JIB-2121)
This invention is a novel laser-assisted nanomaterial deposition method enabling the direct-write fabrication and modification of complex nanostructures on various solid substrates at any temperature. Utilizing laser beams for precise deposition at submicron and nanometer scales, this method offers versatile nanomanufacturing capabilities for creating one-, two-, and three-dimensional nanostructures, and allows for in situ monitoring and modification of existing nanostructures.
Inventors: Costas P. Grigoropoulos, Samuel Mao, Andrew M Minor
Contact: Shanshan Li
Graphene Membranes for Nanometer-scale Lithography and Single Atom Resolution TEM Imaging , 2502 IB-2501
This invention is a method to produce freestanding graphene membranes for creating etch masks and doping patterns in microelectronic devices. These graphene membranes offer superior resolution compared to conventional lithography methods and can visualize defects and dynamics in a transmission electron microscope (TEM), making them valuable for next-generation electronic devices and TEM imaging of various materials.
Inventors: Jannik Christian Meyer, Alex K Zettl
Contact: Lucian Sweitzer
Nanoscale Pattern Transfer for Lithography, Optics, Films and NEMS (IB-2162)
This invention is a novel dry etching process which alternates deposition and etching to produce and transfer nanoscale patterns in various materials, including silicon and metals. Unlike previous methods, this technique offers versatility at the nanoscale, enabling shallow or deep etching of thin films, metal molds, or silicon-based polymer films, and even deep etching of metals for applications like X-ray or extreme ultraviolet optical devices.
Inventors: Weilun Chao, Deirdre L Olynick, Ivo Rangelow
Contact: Lucian Sweitzer
Advanced Manufacturing Methods
Sequence-Defined Polypeptoids for Area-Selective Deposition for Reducing Edge Placement Error in Semiconductor Fabrication (2023-047)
This is a new method of area-selective deposition based on polypeptoids, a type of bioinspired, sequence-defined polymers. These polymers offer precise control over their chemical composition and properties. This invention is expected to be useful for semiconductor manufacturing companies, especially as a self-aligned fabrication process with reduced edge placement errors in the alignment of features in multilayer device stacks.
Inventors: Beihang Yu, Ricardo Ruiz
Contact: Lucian Sweitzer
Direct Growth of Single Crystalline III-V Semiconductors on Amorphous Substrates (2016-03)
This invention is the Templated Liquid Phase (TLP) crystal growth technology, allowing the direct growth of high-performance single crystalline III-V semiconductors on various substrates. Unlike other methods requiring closely matched epitaxial substrates, this approach offers user-defined geometries and dimensions on arbitrary substrates, reducing processing complexity and costs while enabling photovoltaic and optoelectronic applications.
Inventors: Kevin Chen, Ali Javey, Rehan R Kapadia
Contact: Lucian Sweitzer
Enhancing Photoluminescence Quantum Yield for High Performance Optoelectronics (2015-159)
This invention utilizes an organic super acid molecule to passivate and repair surface defects in semiconductor systems, crucial for enhancing the efficiency of optoelectronic devices like LEDs, lasers, and solar cells.
Inventors: Matin Amani, James Bullock, Ali Javey, Daisuke Kiriya, Der-Hsien Lien
Contact: Lucian Sweitzer
High Performance, Made-to-Order Organic Semiconductors for Energy Conversion Applications (2013-138, 2014-080)
This invention introduces a discotic electron donor and electron acceptor derived from naturally occurring indigo, offering a versatile platform for constructing organic semiconductors. The electron donor, Thienoazacoronene (TAC), displays high self-organization and excellent performance in electronic devices, including field-effect transistors and organic photovoltaic devices. Meanwhile, the electron acceptor, BAI, synthesized from indigo dye, demonstrates tunable optoelectronic properties and promising carrier transport characteristics, making it suitable for various applications in flexible electronics.
Inventors: Bo He, Yi Liu, Andrew Pun
Contact: Lucian Sweitzer
Microelectronic Devices
High-Performance Nanocomposite Barrier Materials for Packaging and Electronics (2023-121)
This invention is a method for programming entropy-driven nanosheet growth to create high-performance barrier coatings. Composed of stacked nanosheets with low stacking defects, these coatings offer protection against volatile organic compounds, water, and oxygen, making them suitable for packaging and electron barrier applications. By utilizing high molecular weight polymers and allowing for cycles of assembly, disassembly, and reassembly without compromising structural integrity, these coatings present a promising solution to recycling issues associated with existing multilayer thin film technologies.
Inventors: Ting Xu, Emma Vargo, Le Ma
Contact: Lucian Sweitzer
Customizable and Scalable Ultra-thin Composite Membranes via Atomic Layer Deposition (2021-068)
This is a new fabrication method for making ultra-thin suspended membranes of a variety of materials. These free-standing membranes can be as thin as several nanometers, and are fabricated in a way that allows for the release of ultra-thin ceramic films without damage. Beyond use as electron-transparent windows, these membranes can be used in microelectronics as sensors or diaphragms.
Inventors: Stefano Cabrini, Shaul Aloni, Adam Schwartzberg, Rohan Dhall, Michael Elowson
Contact: Lucian Sweitzer
Antiferromagnetic Memory Storage Device from Magnetic Transition Metal Dichalcogenides (2019-114)
This invention is a novel technology utilizing transition metal dichalcogenides (TMDs) intercalated with magnetic transition metals to create antiferromagnetic memory devices. These devices offer faster, lower-power, and non-volatile memory storage solutions, with the potential for ultrafast spin dynamics and operation at terahertz speeds. Additionally, the absence of external stray fields makes them ideal for tightly packed configurations and promising for future spintronic applications.
Inventors: James Analytis, Spencer Doyle, Caolan John, Eran Maniv, Nityan Nair
Contact: Lucian Sweitzer
First Diode for Thermal Management of Micro and Macro Devices (IB-2336)
This invention introduces the first solid-state thermal rectifier, utilizing boron nitride nanotubes loaded with high-density materials like trimethyl cyclopentadienyl platinum (C9H16Pt). Achieving significant thermal rectification of up to 7 percent at room temperature, the device has potential applications in improving thermal management across various fields, from microelectronics to refrigeration and computing systems utilizing phonons for information processing.
Inventors: Chih-Wei Chang, Arunava Majumdar, Alex K Zettl
Contact: Lucian Sweitzer
More Sensitive, Less Expensive Semiconductor Detectors (IB-2607)
This invention is a semiconductor detector offering enhanced position and energy resolution while being cost-effective and compatible with a wider range of materials. Unlike conventional detectors, this technology features readout electrodes positioned close to, rather than in direct contact with, the semiconductor, eliminating the need for multiple electrical connections and complex fabrication processes.
Inventors: Mark Amman, Paul N. Luke, Craig S Tindall
Contact: Lucian Sweitzer
Nanocrystal Heterostructures with Controlled Branching Points (IB-1948)
This invention is a method for fabricating complex inorganic nanostructures, such as quantum rods and dots, by epitaxially connecting them at branched and linear junctions within single colloidal nanocrystals. By combining different inorganic materials with various functional properties in a single nanocrystal, this approach opens up possibilities for applications in quantum information processing, artificial photosynthesis, and advancements in solar cells, LEDs, and transistors.
Inventors: Armand Alivisatos, Steven M. Hughes, Liberato Manna, Delia J Milliron
Contact: Lucian Sweitzer
Reliable, High Performance Transistors on Flexible Substrates (IB-3252)
This invention is a method to produce uniform and high-performance transistors on mechanically flexible and stretchable substrates using semiconductor-enriched single-wall carbon nanotube (SWNT) networks processed through solution methods. By leveraging the flexibility and bendability of SWNTs, this technology offers a promising avenue for the fabrication of low-cost flexible and stretchable electronics without the need for traditional lithography methods.
Inventors: Ali Javey, Toshitake Takahashi, Kuniharu Takei
Contact: Lucian Sweitzer